Samsung Electronics has announced the start of mass production for its 3nm Gate-All-Around (GAA) semiconductor process, marking a significant milestone in the company’s foundry business and Exynos chip development.
The new 3nm GAA process, called SF3P, represents Samsung’s most advanced manufacturing technology to date and positions the company to compete more aggressively with TSMC in the advanced node market.
Technical Advancements of 3nm GAA
The transition from FinFET to Gate-All-Around (GAA) transistor architecture brings several key benefits:
- Up to 30% better power efficiency compared to 4nm LPP
- Approximately 20% performance improvement at the same power level
- About 60% higher logic density
- Improved signal integrity and reduced electromagnetic interference
